IndiumV3, Chine, Analysis, bibRecord, 000813

InP Lateral Overgrowth Technology for Silicon Photonics

Identifieur interne : 000813 ( Chine/Analysis ); précédent : 000812; suivant : 000814

InP Lateral Overgrowth Technology for Silicon Photonics

Auteurs : RBID : Pascal:11-0312469

Descripteurs français

Pascal (Inist)
- Dislocation, Circuit intégré hybride, Composant actif, Composé binaire, Semiconducteur III-V, Indium Phosphure, Oxyde de silicium, Silicium, Phosphure d'indium, Croissance latérale, Optique intégrée, Epitaxie, Optimisation, Pastille électronique, In P, InP, SiO2, 0130C, 8540, Photonique.

English descriptors

KwdEn :
- Active component, Binary compound, Dislocation, Epitaxy, Hybrid integrated circuit, III-V semiconductors, Indium Phosphides, Indium phosphide, Integrated optics, Lateral growth, Optimization, Photonics, Silicon, Silicon oxides, Wafer.

Abstract

Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002E77
to stream Main, to step Repository: 002C13
to stream Chine, to step Extraction: 000813

Links to Exploration step

Pascal:11-0312469

Le document en format XML

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<seriesStmt><idno type="ISSN">0277-786X</idno>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active component</term>
<term>Binary compound</term>
<term>Dislocation</term>
<term>Epitaxy</term>
<term>Hybrid integrated circuit</term>
<term>III-V semiconductors</term>
<term>Indium Phosphides</term>
<term>Indium phosphide</term>
<term>Integrated optics</term>
<term>Lateral growth</term>
<term>Optimization</term>
<term>Photonics</term>
<term>Silicon</term>
<term>Silicon oxides</term>
<term>Wafer</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Dislocation</term>
<term>Circuit intégré hybride</term>
<term>Composant actif</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Indium Phosphure</term>
<term>Oxyde de silicium</term>
<term>Silicium</term>
<term>Phosphure d'indium</term>
<term>Croissance latérale</term>
<term>Optique intégrée</term>
<term>Epitaxie</term>
<term>Optimisation</term>
<term>Pastille électronique</term>
<term>In P</term>
<term>InP</term>
<term>SiO2</term>
<term>0130C</term>
<term>8540</term>
<term>Photonique</term>
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<front><div type="abstract" xml:lang="en">Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.</div>
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<fA11 i1="01" i2="1"><s1>ZHECHAO WANG</s1>
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<fA11 i1="03" i2="1"><s1>METAFERIA (Wondwosen)</s1>
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<fA11 i1="04" i2="1"><s1>CHEN HU</s1>
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<fA12 i1="01" i2="1"><s1>KOYAMA (Fumio)</s1>
<s9>ed.</s9>
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<s9>ed.</s9>
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<fA12 i1="04" i2="1"><s1>YIDONG HUANG</s1>
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<fC01 i1="01" l="ENG"><s0>Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.</s0>
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<fC02 i1="01" i2="X"><s0>001D03G02C1</s0>
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<fC02 i1="02" i2="X"><s0>001D03F06A</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B00A30C</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Dislocation</s0>
<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>11</s5>
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<s5>50</s5>
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<s5>51</s5>
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<s5>51</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Indium Phosphure</s0>
<s2>NC</s2>
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<s5>52</s5>
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<s2>NK</s2>
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<s5>57</s5>
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<fC03 i1="08" i2="X" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>61</s5>
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<s5>62</s5>
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<s5>63</s5>
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<s5>64</s5>
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<s5>64</s5>
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<s5>64</s5>
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<fC03 i1="12" i2="X" l="FRE"><s0>Epitaxie</s0>
<s5>65</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Epitaxy</s0>
<s5>65</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Epitaxia</s0>
<s5>65</s5>
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<fC03 i1="13" i2="X" l="FRE"><s0>Optimisation</s0>
<s5>66</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Optimization</s0>
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<fC03 i1="13" i2="X" l="SPA"><s0>Optimización</s0>
<s5>66</s5>
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<s5>67</s5>
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<s5>67</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>SiO2</s0>
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<s5>84</s5>
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<s4>INC</s4>
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<s5>69</s5>
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<s5>69</s5>
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<s5>69</s5>
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<fN21><s1>213</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Optoelectronic materials and devices</s1>
<s2>05</s2>
<s3>Shanghai CHN</s3>
<s4>2010</s4>
</fA30>
</pR>
</standard>
</inist>
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InP Lateral Overgrowth Technology for Silicon Photonics

InP Lateral Overgrowth Technology for Silicon Photonics

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English descriptors

Abstract

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